Over the past two decades, Silicon-on-Insulator (SOI) technology has established itself as the preferred semiconductor solution for high-performance, power-efficient, and highly linear integrated wireless systems. Continuous advancements in RF-SOI CMOS platforms including the transition to 300mm wafers — have significantly enhanced key performance metrics such as power handling, linearity, isolation, RON, COFF, energy efficiency, and the integration of smart functionalities.
As the wireless landscape evolves, next-generation systems — particularly those targeting advanced 5G, future 6G, Wifi7 and Wifi8 applications — are pushing the limits of integration, power efficiency, and frequency range. In this talk, we will explore the emerging requirements of these future wireless systems and their implications for the development of RF-SOI technology. We will also highlight the latest innovations in engineered SOI substrates that are poised to meet these challenges, enabling next gen RF front-end solutions.